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SC-PR-SAITO-M-PhysRevLett_92_135505.pdf132.72 kBAdobe PDF
タイトル: Muonium as a Shallow Center in GaN
著者: Shimomura, K.
Kadono, R.
Ohishi, K.
Mizuta, M.
Saito, Mineo link image link image
斎藤, 峯雄
発行日: 2004年 4月 2日
出版社(者): The American Physical Society
引用: Physical Review Letters 92(13),pp.135505(1)-135505(4)
雑誌名: Physical Review Letters
ISSN: 00319007
巻: 92
号: 13
開始ページ: 135505
抄録: The observation of a paramagnetic muonium (Mu) spectrum in single-crystalline gallium nitride (GaN) was discussed. It was observed that a paramagnetic muonium center with extremely small hyperfine parameter was formed in GaN below 25 K. The small hyperfine parameter and small ionization energy of the Mu state indicated that muonium in one of its sites produced a shallow state, which raised the possibility that the analogous hydrogen center was a source of n-type conductivity in GaN. It was also observed that the Mu state had a high anisotropic hyperfine structure with axial symmetry along the [0001] direction, which indicated that the state was located either at a nitrogen-antibonding or a bond-centered site oriented parallel to the c axis.
その他の番号: AA00773679
URI: http://hdl.handle.net/2297/1687
関連URI: http://dx.doi.org/10.1103/PhysRevLett.92.135505
資料種別: Journal Article
権利関係: © 2004 The American Physical Society
版表示: publisher

このアイテムを引用あるいはリンクする場合は次の識別子を使用してください。 http://hdl.handle.net/2297/1687



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