DSpace width= university logo mark
Japanese | English 

KURA > B. 理工学域・研究域/理工学部/自然科学研究科 > b10. 学術雑誌掲載論文 > 1.査読済論文(工) >


ファイル 記述 サイズフォーマット
TE-PR-MORIMOTO-S-708.pdf199.98 kBAdobe PDF
タイトル: Photoluminescence enhancement by excimer laser irradiation in silicon oxide films prepared by pulsed laser ablation
著者: Morimoto, Akiharu link image link image
Takizawa, Hidetoshi
Yonezawa, Yasuto
Kumeda, Minoru link image
Shimizu, Tatsuo
森本, 章治
発行日: 1998年 5月
出版社(者): Elsevier
引用: Journal of Non-Crystalline Solids 227-230 (PART 1), pp. 493-497
雑誌名: Journal of Non-Crystalline Solids
ISSN: 0022-3093
巻: 227-230
号: PART1
開始ページ: 493
終了ページ: 497
キーワード: Si oxide
Pulsed laser ablation
Laser irradiation
抄録: Silicon oxide films were prepared at room temperature by pulsed laser ablation using an ArF or KrF excimer laser in a gas mixture of He and O2. The effect of an ArF excimer laser irradiation on the deposited film was investigated. As-deposited transparent films containing Si crystallites with sizes greater than 10 nm show photoluminescence. However, after laser irradiation with 1000 shots, the photoluminescence (PL) intensity was increased by two orders of magnitude. The PL spectrum is centered around 570 nm (2.2 eV). The origin of the large PL enhancement is discussed
URI: http://hdl.handle.net/2297/1877
関連URI: http://dx.doi.org/10.1016/S0022-3093(98)00096-9
資料種別: Journal Article
版表示: author

このアイテムを引用あるいはリンクする場合は次の識別子を使用してください。 http://hdl.handle.net/2297/1877



Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - ご意見をお寄せください