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TE-PR-YAN-H-1992-247.pdf238.25 kBAdobe PDF
タイトル: Origin of surface defects in a-Si:H films
著者: Yan, H.
Morimoto, Akiharu link image link image
Kumeda, Minoru link image
Shimizu, Tatsuo
Yonezawa, Yasuto
森本, 章治
久米田, 稔
発行日: 1992年
出版社(者): Materials Research Society
雑誌名: Materials Research Society Symposium Proceedings
ISSN: 0272-9172
巻: 258
開始ページ: 247
終了ページ: 252
抄録: Surface oxidation and surface defect creation processes in a-Si:H films have been studied in detail by means of electron spin resonance(ESR) and X-ray photoelectron spectroscopy(XPS). It is found that Si dangling bonds created by the surface oxidation distribute far wider than the thickness of the SiO2 layer. These defects are also found to be removed out by annealing at around 100cC. These defects are proposed to be created by a stress in a-Si:H induced by the surface oxidation. Moreover, the presence of the surface defects unrelated to oxidation is shown for the first time by the present experiment. The origin of these defects, however, are not clear at present.
URI: http://hdl.handle.net/2297/24538
資料種別: Journal Article
版表示: publisher

このアイテムを引用あるいはリンクする場合は次の識別子を使用してください。 http://hdl.handle.net/2297/24538



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