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CS-PR-SATO-M-formation of finger-like.pdf4.38 MBAdobe PDF公開予定日: 未定
タイトル: Formation of finger-like step patterns on a Si(111) vicinal face
著者: Sato, Masahide link image link image
Kondo, Shinji
Uwaha, Makio
佐藤, 正英
発行日: 2011年 3月
出版社(者): Elsevier BV
雑誌名: Journal of Crystal Growth
ISSN: 0022-0248
巻: 318
号: 1
開始ページ: 14
終了ページ: 17
キーワード: A1. Crystal morphology
A1. Growth model
A1. Surfaces
抄録: During deposition of Ga atoms, the structure of a Si(111) vicinal face is transformed from the sqrt(3) × sqrt(3) structure to the 6.3×6.3 structure. The transformation occurs preferentially from the lower side of steps. Since the density of Si atoms needed to form the 6.3×6.3 structure is lower than that to form the sqrt(3) × sqrt(3) structure, Si atoms are supplied onto the surface during the structural transition. The steps advance by incorporating the extra adatoms, and show a finger-like wandering pattern (H. Hibino, H. Kageshima, M. Uwaha, Surf. Sci. 602 (2008) 2421). To study the formation of the finger-like pattern, we carry out Monte Carlo simulations. When atoms are supplied immediately in front of a straight step, the step becomes unstable. Step wandering occurs and a step shows a finger-like pattern. The characteristic period of the fingers is consistent with the linear stability analysis and proportional to (over(β, ̃) / V)1 / 2, where over(β, ̃) is the step stiffness and V is the step velocity (deposition rate). © 2010 Elsevier B.V. All rights reserved.
DOI: 10.1016/j.jcrysgro.2010.10.093
URI: http://hdl.handle.net/2297/25772
関連URI: http://www.elsevier.com/locate/issn/00220248
資料種別: Journal Article
版表示: author
出現コレクション:1. 査読済論文

このアイテムを引用あるいはリンクする場合は次の識別子を使用してください。 http://hdl.handle.net/2297/25772



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