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タイトル: The influence of the hot wire temperature on the crystallization of μc-Si:H films prepared by hot wire-assisted-ECR-CVD
著者: Li, Ying
Zhong L., Zhi
Hua Chen, Guang
Kumeda, Minoru link image
久米田, 稔
発行日: 2007年
出版社(者): Materials Research Society
雑誌名: Materials Research Society Symposium Proceedings
ISSN: 0272-9172
巻: 910
開始ページ: 207
終了ページ: 212
抄録: We have constructed a hot-wire-assisted ECR-CVD system to prepare a-Si:H and μc-Si:H films. The effect of hot wire (HW) temperature on crystallization of a-Si:H films is studied in the films prepared by this system. At low HW temperature, about 20 at.% hydrogen is included in the film. With increasing the HW temperature, the contents of the total hydrogen, SiH2 and SiH decrease, and the microcrystalline phase appears. It is found from the area of the TO peak of the Raman scattering spectra that the volume fraction of the crystalline phase increases with increasing the HW temperature. The crystalline peak has a tendency to shift toward the higher wavenumber with increasing the HW temperature, suggesting that the grain size increases with increasing the HW temperature. © 2006 Materials Research Society.
URI: http://hdl.handle.net/2297/6745
資料種別: Conference Paper
版表示: author

このアイテムを引用あるいはリンクする場合は次の識別子を使用してください。 http://hdl.handle.net/2297/6745



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